(钆镓石榴石GGG) (钇铝石榴石YAG) 钒酸钇(YVO4) 钒酸钆（YVO4） 磷酸氧钛钾（KTP） 三硼酸锂（LBO） 偏硼酸钡（BBO） KTP(磷酸氧钛钾)激光晶体 Wafer
WaferHome can manufacture 晶体 Wafer
Specification for (钆镓石榴石GGG) (钇铝石榴石YAG) 钒酸钇(YVO4) 钒酸钆（YVO4） 磷酸氧钛钾（KTP） 三硼酸锂（LBO） 偏硼酸钡（BBO） KTP(磷酸氧钛钾)激光晶体 Wafer
| Item | Dimeter（直径） | Type/dopant（类型/掺杂） | Orientaion | Coating Film |
Wavefront distortion |
Parallelism | Reflectivity | dopant element concentration | Flatness |
Surface/Roughness（表面粗糙度） | Geometric parameter |
|---|---|---|---|---|---|---|---|---|---|---|---|
| GGG | 25.4mm 50.8mm 76.5mm 100mm |
Intrinsic | <100><110><111> |
AR/HR/PR | ≤0.15入/25mm | 10 arc sec | 1.95 | 0.5~1.2(±0.1)atm% | < λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
| (Nd:GGG) | 25.4mm 50.8mm 76.5mm 100mm |
Nd(钕) | <100><110><111> |
AR/HR/PR | ≤0.15入/25mm | 10 arc sec | 1.95 | 0.5~1.2(±0.1)atm% | < λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
| (Yb:GGG) | 25.4mm 50.8mm 76.5mm 100mm |
镱(Yb) | <100><110><111> |
AR/HR/PR | ≤0.15入/25mm | 10 arc sec | 1.95 | 0.5~1.2(±0.1)atm% | < λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
| YAG |
25.4mm 50.8mm 76.5mm 100mm | Intrinsic | <100><110><111> | AR/HR/PR | ≤0.125入/25mm | 10 arc sec | 1.82 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
| (Nd:YAG ) |
25.4mm 50.8mm 76.5mm 100mm | Nd(钕) | <100><110><111> | cubic | ≤0.125入/25mm | 10 arc sec | 1.82 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
| (Er:YAG ) |
25.4mm 50.8mm 76.5mm 100mm | Er | <100><110><111> | AR/HR/PR | ≤0.125入/25mm | 10 arc sec | 1.82 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
| (Yb:YAG ) |
25.4mm 50.8mm 76.5mm 100mm | 镱(Yb) | <100><110><111> | AR/HR/PR | ≤0.125入/25mm | 10 arc sec | 1.82 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
YVO4 |
25.4mm 50.8mm 76.5mm 100mm | Intrinsic | <100><110><111> | AR/HR/PR | ≤0.25入/25mm | 10 arc sec | 2.1 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
(Nd:YVO4) |
25.4mm 50.8mm 76.5mm 100mm | Nd(钕) | <100><110><111> | AR/HR/PR | ≤0.25入/25mm | 10 arc sec | 2.1 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
(Er:YVO4) |
25.4mm 50.8mm 76.5mm 100mm | Er | <100><110><111> | AR/HR/PR | ≤0.25入/25mm | 10 arc sec | 2.1 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
(Yb:YVO4) |
25.4mm 50.8mm 76.5mm 100mm | 镱(Yb) | <100><110><111> | AR/HR/PR | ≤0.25入/25mm | 10 arc sec | 2.5 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
磷酸钛氧钾(KTP) |
25.4mm 50.8mm 76.5mm 100mm | X Y Z cut | AR/HR/PR | > λ/8 @ 633 nm | 10 arc sec | 2.1 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um | |
KDP(KH2 PO4) |
25.4mm 50.8mm 76.5mm 100mm | X Y Z cut | AR/HR/PR | > λ/8 @ 633 nm | 10 arc sec | 2.1 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um | |
Lithium Triborate (LiB3O5 , LBO) |
25.4mm 50.8mm 76.5mm 100mm | X Y Z cut | AR/HR/PR | > λ/8 @ 633 nm | 10 arc sec | 2.1 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um | |
Beta-Barium Borate (β-BaB2O4,BBO) |
25.4mm 50.8mm 76.5mm 100mm | X Y Z cut | AR/HR/PR | > λ/8 @ 633 nm | 10 arc sec | 2.1 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um | |
BiB3O6 (BIBO) |
25.4mm 50.8mm 76.5mm 100mm | X Y Z cut | AR/HR/PR | > λ/8 @ 633 nm | 10 arc sec | 2.1 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um | |
BiB3O6 (BIBO) |
25.4mm 50.8mm 76.5mm 100mm | X Y Z cut | AR/HR/PR | > λ/8 @ 633 nm | 10 arc sec | 2.1 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um | |
| 钛宝石(Ti:sappire） 红宝石(Cr:sappire） |
25.4mm 50.8mm 76.5mm 100mm | Ti/Cr | C A M cut | AR/HR/PR | > λ/8 @ 633 nm | >17db | 2.1 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
Yb:KGd(WO4) |
25.4mm 50.8mm 76.5mm 100mm | 镱(Yb) | X Y Z cut | AR/HR/PR | > λ/8 @ 633 nm | >17db | 2.1 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
Nd:KGd(WO4) |
25.4mm 50.8mm 76.5mm 100mm | Nd(钕) | X Y Z cut | AR/HR/PR | > λ/8 @ 633 nm | >17db | 2.1 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm |
polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
TSAG |
25.4mm 50.8mm 76.5mm 100mm | > λ/8 @ 633 nm | 10 arc sec | 2.1 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um | |||
TGG(铽镓石榴石 |
25.4mm 50.8mm 76.5mm 100mm | > λ/8 @ 633 nm | 10 arc sec | 2.1 | 0.5~1.2(±0.1)atm% |
< λ/10 @ 632.8 nm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |